october 2012 ?2012 fairchild semiconductor corporation FDMS86104 rev. c1 www.fairchildsemi.com 1 FDMS86104 n-channel powertrench ? mosfet power 56 d d d d g s s s pin 1 bottom top d d d d s s s g FDMS86104 n-channel powertrench ? mosfet 100 v, 16 a, 24 m features ? max r ds(on) = 24 m at v gs = 10 v, i d = 7 a ? max r ds(on) = 39 m at v gs = 6 v, i d = 5.5 a ? advanced package and silicon combination for low r ds(on) and high efficiency ? msl1 robust package design ? 100% uil tested ? rohs compliant general description this n-channel mosfet is produced using fairchild semiconductor?s adv anced power trench ? process thant has been especially tailored to mini mize the on-state resistance and yet maintain superior switching performance. application ? dc-dc conversion mosfet maximum ratings t a = 25 c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter ratings units v ds drain to source voltage 100 v v gs gate to source voltage 20 v i d drain current -continuous t c = 25 c 16 a -continuous t a = 25 c (note 1a) 7 -pulsed 30 e as single pulse avalanche energy (note 3) 96 mj p d power dissipation t c = 25 c 73 w power dissipation t a = 25 c (note 1a) 2.5 t j , t stg operating and storage junction temperature range -55 to +150 c r jc thermal resistance, junction to case 1.7 c/w r ja thermal resistance, junction to ambient (note 1a) 50 device marking device package reel size tape width quantity FDMS86104 FDMS86104 power 56 13 ?? 12 mm 3000 units
FDMS86104 n-channel powertrench ? mosfet www.fairchildsemi.com 2 ?2012 fairchild semiconductor corporation FDMS86104 rev. c1 electrical characteristics t j = 25 c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics drain-source diode characteristics symbol parameter test conditions min typ max units bv dss drain to source breakdown voltage i d = 250 a, v gs = 0 v 100 v bv dss t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 c 66 mv/c i dss zero gate voltage drain current v ds = 80 v, v gs = 0 v 1 a i gss gate to source leakage current v gs = 20 v, v ds = 0 v 100 na v gs(th) gate to source threshold voltage v gs = v ds , i d = 250 a22.94v v gs(th) t j gate to source threshold voltage temperature coefficient i d = 250 a, referenced to 25 c -10 mv/c r ds(on) static drain to source on resistance v gs = 10 v, i d = 7 a 20 24 m v gs = 6 v, i d = 5.5 a 27 39 v gs = 10 v, i d = 7 a, t j = 125 c 33 40 g fs forward transconductance v ds = 10 v, i d = 7 a 18 s c iss input capacitance v ds = 50 v, v gs = 0 v, f = 1 mhz 694 923 pf c oss output capacitance 178 237 pf c rss reverse transfer capacitance 8 13 pf r g gate resistance 0.5 t d(on) turn-on delay time v dd = 50 v, i d = 7 a, v gs = 10 v, r gen = 6 816ns t r rise time 3.5 10 ns t d(off) turn-off delay time 14.3 26 ns t f fall time 3.2 10 ns q g total gate charge v gs = 0 v to 10 v v dd = 50 v, i d = 7 a 11.7 16 nc q g total gate charge v gs = 0 v to 5 v 6.7 9 q gs gate to source charge 3.2 nc q gd gate to drain ?miller? charge 3 nc v sd source to drain diode forward voltage v gs = 0 v, i s = 2 a (note 2) 0.7 1.2 v v gs = 0 v, i s = 7 a (note 2) 0.8 1.3 t rr reverse recovery time i f = 7 a, di/dt = 100 a/ s 44 70 ns q rr reverse recovery charge 41 65 nc notes : 1. r ja is determined with the device mounted on a 1in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of fr-4 material. r jc is guaranteed by design while r ca is determined by the user's board design. 2. pulse test: pulse width < 300 s, duty cycle < 2.0%. 3. starting t j = 25 c, l = 3 mh, i as = 8 a, v dd = 100 v, v gs = 10 v a. 50 c/w when mounted on a 1 in 2 pad of 2 oz copper. b. 125 c/w when mounted on a minimum pad of 2 oz copper. g df ds sf ss g df ds sf ss
FDMS86104 n-channel powertrench ? mosfet www.fairchildsemi.com 3 ?2012 fairchild semiconductor corporation FDMS86104 rev. c1 typical characteristics t j = 25 c unless otherwise noted figure 1. 012345 0 6 12 18 24 30 v gs = 6.5 v v gs = 10 v v gs = 4.5 v v gs = 5 v v gs = 8 v pulse duration = 80 p s duty cycle = 0.5% max i d , drain current (a) v ds , drain to source voltage (v) on-region characteristics figure 2. 0 6 12 18 24 30 0 1 2 3 4 5 v gs = 4.5 v pulse duration = 80 p s duty cycle = 0.5% max normalized drain to source on-resistance i d , drain current (a) v gs = 6.5 v v gs = 8 v v gs = 5 v v gs = 10 v n o r m a l i z e d o n - r e s i s t a n c e vs drain current and gate voltage f i g u r e 3 . n o r m a l i z e d o n - r e s i s t a n c e -75 -50 -25 0 25 50 75 100 125 150 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 i d = 7 a v gs = 10 v normalized drain to source on-resistance t j , junction temperature ( o c ) vs junction temperature figure 4. 45678910 0.00 0.05 0.10 0.15 0.20 t j = 125 o c i d = 7 a t j = 25 o c v gs , gate to source voltage (v) r ds(on) , drain to source on-resistance ( m : ) pulse duration = 80 p s duty cycle = 0.5% max o n - r e s i s t a n c e v s g a t e t o source voltage figure 5. transfer characteristics 23456 0 6 12 18 24 30 t j = 25 o c t j = 150 o c v ds = 5 v pulse duration = 80 p s duty cycle = 0.5% max t j = -55 o c i d , drain current (a) v gs , gate to source voltage (v) figure 6. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.001 0.01 0.1 1 10 40 t j = -55 o c t j = 25 o c t j = 150 o c v gs = 0 v i s , reverse drain current (a) v sd , body diode forward voltage (v) s o u r c e t o d r a i n d i o d e forward voltage vs source current
FDMS86104 n-channel powertrench ? mosfet www.fairchildsemi.com 4 ?2012 fairchild semiconductor corporation FDMS86104 rev. c1 figure 7. 0 3 6 9 12 15 0 2 4 6 8 10 i d = 7 a v dd = 50 v v dd = 25 v v gs , gate to source voltage (v) q g , gate charge (nc) v dd = 75 v gate charge characteristics figure 8. 0.1 1 10 100 1 10 100 1000 2000 f = 1 mhz v gs = 0 v capacitance (pf) v ds , drain to source voltage (v) c rss c oss c iss c a p a c i t a n c e v s d r a i n to source voltage figure 9. 0.01 0.1 1 10 30 1 10 20 t j = 100 o c t j = 25 o c t j = 125 o c t av , time in avalanche (ms) i as , avalanche current (a) u n c l a m p e d i n d u c t i v e switching capability figure 10. 25 50 75 100 125 150 0 2 4 6 8 v gs = 6 v r t ja = 50 o c/w v gs = 10 v i d , drain current (a) t a , ambient temperature ( o c ) m a x i m u m c o n t i n u o u s d r a i n current vs ambient temperature figure 11. 0.05 0.1 1 10 100 400 0.005 0.01 0.1 1 10 50 100 us 10 s 10 ms dc 1 s 100 ms 1 ms i d , drain current (a) v ds , drain to source voltage (v) this area is limited by r ds(on) single pulse t j = max rated r t ja = 125 o c/w t a = 25 o c fo rw ard bi as safe operating area f i g u r e 1 2 . s i n g l e p u l s e m a x i m u m po wer dissipation 10 -4 10 -3 10 -2 10 -1 110 100 1000 0.5 1 10 100 1000 4000 single pulse r t ja = 125 o c/w t a = 25 o c p ( pk ) , peak transient power (w) t, pulse width (sec) typical characteristics t j = 25 c unless otherwise noted
FDMS86104 n-channel powertrench ? mosfet www.fairchildsemi.com 5 ?2012 fairchild semiconductor corporation FDMS86104 rev. c1 figure 13. junction-to-ambient transient thermal response curve 10 -4 10 -3 10 -2 10 -1 11 0 100 1000 0.0001 0.001 0.01 0.1 1 2 single pulse r t ja = 125 o c/w duty cycle-descending order normalized thermal impedance, z t ja t, rectangular pulse duration (sec) d = 0.5 0.2 0.1 0.05 0.02 0.01 p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z t ja x r t ja + t a figure 14. power vs case temperature 0 25 50 75 100 125 150 175 0 20 40 60 80 100 power dissipation (w) t c , case temperature ( o c ) typical characteristics t j = 25 c unless otherwise noted
FDMS86104 n-channel powertrench ? mosfet www.fairchildsemi.com 6 ?2012 fairchild semiconductor corporation FDMS86104 rev. c1 dimensional outlin e and pad layout
7 www.fairchildsemi.com FDMS86104 n-channel powertrench ? mosfet ?2012 fairchild semiconductor corporation FDMS86104 rev. c1 trademarks the following includes registered and unregistered trademarks and service marks, owned by fairch ild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes with out further notice to any products herein to improve reliability, function, or design. fairchild does not assume an y liability arising out of th e application or use of any product or circuit described herein; neither does it convey an y license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s wo rldwide terms and conditions , specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized fo r use as critical components in life support devices or systems without the express written approval of fa irchild semiconductor corporation. as used here in: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform w hen properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably ex pected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms 2cool? accupower? ax-cap?* bitsic ? build it now? coreplus? corepower? crossvolt ? ctl? current transfer logic? deuxpeed ? dual cool? ecospark ? efficentmax? esbc? fairchild ? fairchild semiconductor ? fact quiet series? fact ? fast ? fastvcore? fetbench? flashwriter ? * fps? f-pfs? frfet ? global power resource sm green bridge? green fps? green fps? e-series? g max ? gto? intellimax? isoplanar? marking small speakers sound louder and better? megabuck? microcoupler? microfet? micropak? micropak2? millerdrive? motionmax? motion-spm? mwsaver? optohit? optologic ? optoplanar ? powertrench ? powerxs? programmable active droop? qfet ? qs? quiet series? rapidconfigure? saving our world, 1mw/w/kw at a time? signalwise? smartmax? smart start? solutions for your success? spm ? stealth? superfet ? supersot?-3 supersot?-6 supersot?-8 supremos ? syncfet? sync-lock? ?* the power franchise ? ? tinyboost? tinybuck? tinycalc? tinylogic ? tinyopto? tinypower? tinypwm? tinywire? transic ? trifault detect? truecurrent ? * serdes? uhc ? ultra frfet? unifet? vcx? visualmax? voltageplus? xs? ? ? tm datasheet identification product status definition advance information formative / in design datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; supplementary data will be published at a later date. fairchild semiconductor reserves the ri ght to make changes at any time without notice to improve design. no identification needed full production datasheet contains final specifications. fair child semiconductor reserves the right to make changes at any time without notice to improve the design. obsolete not in production datasheet contains specifications on a product t hat is discontinued by fairchild semiconductor. the datasheet is for reference information only. anti-counterfeiting policy fairchild semiconductor corporation?s anti-counterfeiting policy. fairchild?s anti-counterfeiting policy is also stated on our external website, www.fairchildsemi.com, under sales support . counterfeiting of semiconductor parts is a growing problem in the industry. all manufactures of semiconductor products are expe riencing counterfeiting of their parts. customers who inadvertently purchase counterfeit parts ex perience many problems such as loss of brand reputation, substa ndard performance, failed application, and increased cost of production and manufacturing de lays. fairchild is taking strong measures to protect ourselve s and our customers from the proliferation of counterfeit parts. fairchild strongly encourages customers to purchase fairchild parts either directly from fa irchild or from authorized fairchild distributors who are listed by country on our web page cited above. products customers buy either from fairchild directly or fr om authorized fairchild distributors are genuine parts, have full traceability, meet fairchild?s quality standards for handing and storage and provide access to fairchild?s full range of up-to-date technical and product information. fairchild and our authorized distributors will stand behind all warranties and wi ll appropriately address and warranty issues that may arise. fairchild will not provide any warranty coverage or other assistance for parts bought from unau thorized sources. fairchild is committed to combat this global problem and encourage our custom ers to do their part in stopping this practice by buying direct or from authorized distributors. rev. i61 tm ?
|
